The 1st Sino-German Symposium on Electronic and Memory Materials, Nov 1-5, 2015, Aachen, Germany

Meeting Theme

The global demand for data storage has turned explosive in the "information era". Silicon-based Flash memories, which currently dominate the non-volatile storage market, seem to have now reached their performance and scalability limits. Massive efforts have been underway on development of new electronic materials for next-generation of data storages and memories. In this bilateral symposium, we aim at bringing together leading scientists in the field of new electronic and memory materials from China and Germany to discuss breakthroughs and challenges in fundamental research as well as prospects for future applications. The symposium will focus on three emerging and promising candidate materials, namely, phase change materials, switching oxides, spintronics materials. Random access memory devices have already developed based on these three groups of materials, referred as PRAM, RRAM and MRAM. The symposium will serve as an academic exchange platform for Chinese and German scientists, enhancing the current collaborations and initializing new topics. We believe the symposium will significantly boost the development of new electronic materials and memory devices.

Sponsored By
Chinesisch-Deutschen Zentrum 中德科学中心 under Project GZ1243

Organized By
RWTH Aachen University      

Xi'an Jiaotong University 西安交通大学

 Forschungszentrum Jülich

Supported By 
SFB917 Nanoswitches                      



Materials Science and Engineering - MatSE

School of Materials Science and Engineering

Important Dates

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