The 1st Sino-German Symposium on Electronic and Memory Materials, Nov 1-5, 2015, Aachen, Germany

Meeting Theme

The global demand for data storage has turned explosive in the "information era". Silicon-based Flash memories, which currently dominate the non-volatile storage market, seem to have now reached their performance and scalability limits. Massive efforts have been underway on development of new electronic materials for next-generation of data storages and memories. In this bilateral symposium, we aim at bringing together leading scientists in the field of new electronic and memory materials from China and Germany to discuss breakthroughs and challenges in fundamental research as well as prospects for future applications. The symposium will focus on three emerging and promising candidate materials, namely, phase change materials, switching oxides, spintronics materials. Random access memory devices have already developed based on these three groups of materials, referred as PRAM, RRAM and MRAM. The symposium will serve as an academic exchange platform for Chinese and German scientists, enhancing the current collaborations and initializing new topics. We believe the symposium will significantly boost the development of new electronic materials and memory devices.
 
在信息时代的今天,全球对数据存储的需求呈爆炸式增长。基于硅工业的闪存占据了当前非易失性存储市场,但其存储密度及性能已经接近上限。开发新式存储模式、存储材料势在必行。当下各大半导体公司、高校研究所已经投入了大量精力来发展新的电子内存材料。在这次双边研讨会上,我们旨在将来自中德两国新电子与数据存储材料领域的一流科学工作者聚集起来,共同讨论新式电子材料、内存材料在基础研究、实际应用中取得的突破,存在的挑战以及对未来的展望。此次研讨会我们将集中讨论三种最具竞争力的新型电子材料,即相变材料、阻变氧化物、自旋电子材料,以及基于这些材料发展的存储设备,即相变内存、阻变内存、磁阻内存。这次研讨会将为中德科学工作者提供一个非常重要的学术交流平台,加强当前已有的合作,并促进产生新的合作关系。我们相信这次研讨会将对进一步提高新式电子材料与内存的发展做出突出贡献。

Sponsored By
Chinesisch-Deutschen Zentrum 中德科学中心 under Project GZ1243


Organized By
RWTH Aachen University      
 

Xi'an Jiaotong University 西安交通大学


 Forschungszentrum Jülich


Supported By 
SFB917 Nanoswitches                      
 

CAMP-NANO 微纳中心


JARA-FIT


Materials Science and Engineering - MatSE


School of Materials Science and Engineering
 

Important Dates

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