The 1st Sino-German Symposium on Electronic and Memory Materials, Nov 1-5, 2015, Aachen, Germany

Introduction

Investigations on new electronic and memory materials are very active in both Germany and China.

中德两国对新式电子和内存材料的发展均非常重视。

From German side, Forschungszentrum Jülich has a very strong background on magnetic data storage, spintronic materials and spintronics based magnetic random-access memory. Prof. Peter Grünberg from Jülich has been award the Nobel Prize in Physics in 2007, owing to his significant contributions on magnetic data storage and Giant Magneto Resistance phenomenon. Besides, Deutsche Forschungsgemeinschaft (DFG) has funded a collaborative research project on PRAM and RRAM—SFB917 "nanoswitches", in 2011, aiming at understanding the fundamental of the switching mechanism behind the data storage concept. The collaborative research was conducted by more than 20 research groups from RWTH Aachen and Forschungszentrum Jülich. In addition, several renowned research groups from Berlin, Hamburg, Göttingen, Duisburg and Dresden have achieved excellent results in these fields.

从德国方面来讲,于利希研究中心在磁性存储、自旋电子材料、基于自旋电子学的新式磁性存储方面有着巨大的研究优势。该中心的Peter Grünberg教授于2007年被授予诺贝尔物理学奖,以表彰其在磁性存储与巨磁阻效应方面取得的突出贡献。其次德国科学基金会DFG自2011年起资助了关于相变存储与阻变存储的大型合作项目SFB917"纳米开关",目标是研究新式数据存储模式的基础调控原理。这个合作中心集合了来自德国亚琛工业大学与于利希研究中心多达20个独立的研究团队。同时,来自于德国柏林、汉堡、哥廷根、杜伊斯堡、德累斯顿等多家研究机构在电子内存材料领域也取得了丰硕的成果。

From China side, National Natural Science Foundation of China (NSFC) has funded many national projects on PRAM, RRAM and MRAM, including several 973, 863, Key Programs, General Programs and so on, which promoted breakthroughs in the fundamental research of these fields by many research groups and research institutes from Xi'an Jiaotong University, Tsinghua University, Beihang Univeristy, Shanghai Institute of Microsystem and Information Technology (Chinese Academic of Sciences), Institute of Physics (Chinese Academic of Sciences), Huazhong University of Science & Technology, Nanjing University, Sun Yat-Sen University, Jilin University, etc. In addition, some of these research institutions have also developed very well in the design of functioning devices and commercial products. 

从中国方面来看,中国自然科学基金委员会(NSFC)资助了众多关于相变存储、阻变存储、磁阻存储的国家级项目,包括数个973、863、重大科技专项、重点项目、面上项目等。这些支持使得西安交通大学、清华大学、北京航天航空大学、中国科学院上海微系统与信息技术研究所、中国科学院物理研究所、武汉华中科技大学、南京大学、中山大学、吉林大学等的数十个研究团队在新式存储材料领域的基础研究方面取得突破性进展。其中的部分团队已经在器件设计、商业化产品设计方面取得了很好的成绩。

As scientists from both countries share the common interests of research in developing new memory materials and devices, bilateral symposia on this direction are under demand. In this symposium, we plan 34 in-depth presentations on specific topics about PRAM, RRAM and MRAM, to give an overview on the research status of memory materials in Germany and China, and discuss possible collaborations on fundamental research as well as device applications. We believe that the bilateral symposium will lead to important progress in the active research field of electronic and memory materials that promotes the development of next-generation data storage and memory applications. The symposium is initialized and promoted by Prof. Matthias Wuttig and Prof. Joachim Mayer from RWTH Aachen University, Prof. Chun-Lin Jia from Forschungszentrum Jülich, Prof. Wei Zhang, Prof. Hong Wang and Prof. Zhi-Wei Shan from Xi'an Jiaotong University. 

鉴于中德两国的科学工作者在发展新存储材料与器件上有着共同的兴趣,此方向的双边研讨会显得至关重要。在此次研讨会上,我们计划了34个高水准的学术报告,将围绕中德两国在相变存储、阻变存储、磁阻存储等三个方面的科研现状进行全面深入的回顾,并且讨论各个学术团队在该领域内基础研究与器件应用方面合作的可能性。我们相信这次的双边研讨会对电子与存储材料领域产生重要的推动作用,将促进下一代数据存储与内存技术的长足发展。本次研讨会的发起人是亚琛工业大学的Matthias Wuttig教授、Joachim Mayer教授,于利希研究中心的贾春林教授,西安交通大学的张伟副教授、汪宏教授与单智伟教授。

We highly acknowledge the generous grants provided by Chinesisch-Deutschen Zentrum für Wissenschaftsförderung under the project GZ1243. We also gratefully thank for the important support provided by SFB917 Nanoswtiches, Jülich Aachen Research Alliance - Future Information Technology (JARA-FIT), the Profile Area Materials Science at RWTH Aachen university, Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano) and School of Materials Science and Engineering at Xi'an Jiaotong University. We owe special thanks to Prof. Evan Ma from Johns Hopkins University for his instructive suggestions. 

我们非常感谢中德科学中心的经费支持(项目名称GZ1243),以及来自SFB917"纳米开关"、于利希亚琛联合研究会-未来信息技术、亚琛工业大学材料学领域、西安交通大学微纳米尺度材料性能研究中心(微纳中心)、西安交通大学材料科学与工程学院的鼎力支持。我们要特别致谢美国约翰霍普金斯大学的马恩教授,非常感谢其给出的建设性意见。

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